Nanoelectromechanical Systems (NEMS) for Hardware Security in Advanced Packaging

As hardware security threats escalate across semiconductor manufacturing and advanced packaging, there is a growing need for novel physical mechanisms to counter sophisticated attacks such as tampering, counterfeiting, and supply chain infiltration. This paper presents Nanoelectromechanical Systems (NEMS) as an emerging class of hardware security primitives that enable physical assurance, tamper detection, and authentication at the device level. Leveraging mechanisms such as NEMS-based Physically Unclonable Functions (PUFs), shape memory materials, resonance-based fingerprints, and physical unlocking architectures, these systems offer enhanced resilience to reverse engineering, side-channel attacks, and environmental degradation. By harnessing mechanical unpredictability and fabrication-induced nanoscale variability, NEMS technologies introduce a physically robust and low-power alternative to conventional digital security methods. Their seamless integration into standard semiconductor workflows paves the way for scalable, verifiable, and secure solutions across defense, aerospace, critical infrastructure, and consumer electronics.

In-Situ Thickness Measurement of Die Silicon Using Voltage Imaging for Hardware Assurance

Hardware assurance of electronics is a challenging task and is of great interest to the government and the electronics industry. Physical inspection-based methods such as reverse engineering (RE) and Trojan scanning (TS) play an important role in hardware assurance. Therefore, there is a growing demand for automation in RE and TS. Many state-of-the-art physical inspection methods incorporate an iterative imaging and delayering workflow. In practice, uniform delayering can be challenging if the thickness of the initial layer of material is non-uniform. Moreover, this non-uniformity can reoccur at any stage during delayering and must be corrected. Therefore, it is critical to evaluate the thickness of the layers to be removed in a real-time fashion. Our proposed method uses electron beam voltage imaging, image processing, and Monte Carlo simulation to measure the thickness of remaining silicon to guide a uniform delayering process