A Review on Digital Pixel Sensors

Digital pixel sensor (DPS) has evolved as a pivotal component in modern imaging systems and has the potential to revolutionize various fields such as medical imaging, astronomy, surveillance, IoT devices, etc. Compared to analog pixel sensors, the DPS offers high speed and good image quality. However, the introduced intrinsic complexity within each pixel, primarily attributed to the accommodation of the ADC circuit, engenders a substantial increase in the pixel pitch. Unfortunately, such a pronounced escalation in pixel pitch drastically undermines the feasibility of achieving high-density integration, which is an obstacle that significantly narrows down the field of potential applications. Nonetheless, designing compact conversion circuits along with strategic integration of 3D architectural paradigms can be a potential remedy to the prevailing situation. This review article presents a comprehensive overview of the vast area of DPS technology. The operating principles, advantages, and challenges of different types of DPS circuits have been analyzed. We categorize the schemes into several categories based on ADC operation. A comparative study based on different performance metrics has also been showcased for a well-rounded understanding.

Recent Advances in Scalable Energy-Efficient and Trustworthy Spiking Neural networks: from Algorithms to Technology

Neuromorphic computing and, in particular, spiking neural networks (SNNs) have become an attractive alternative to deep neural networks for a broad range of signal processing applications, processing static and/or temporal inputs from different sensory modalities, including audio and vision sensors. In this paper, we start with a description of recent advances in algorithmic and optimization innovations to efficiently train and scale low-latency, and energy-efficient spiking neural networks (SNNs) for complex machine learning applications. We then discuss the recent efforts in algorithm-architecture co-design that explores the inherent trade-offs between achieving high energy-efficiency and low latency while still providing high accuracy and trustworthiness. We then describe the underlying hardware that has been developed to leverage such algorithmic innovations in an efficient way. In particular, we describe a hybrid method to integrate significant portions of the model's computation within both memory components as well as the sensor itself. Finally, we discuss the potential path forward for research in building deployable SNN systems identifying key challenges in the algorithm-hardware-application co-design space with an emphasis on trustworthiness.

Object Motion Sensitivity: A Bio-inspired Solution to the Ego-motion Problem for Event-based Cameras

Neuromorphic (event-based) image sensors draw inspiration from the human-retina to create an electronic device that can process visual stimuli in a way that closely resembles its biological counterpart. These sensors process information significantly different than the traditional RGB sensors. Specifically, the sensory information generated by event-based image sensors are orders of magnitude sparser compared to that of RGB sensors. The first generation of neuromorphic image sensors, Dynamic Vision Sensor (DVS), are inspired by the computations confined to the photoreceptors and the first retinal synapse. In this work, we highlight the capability of the second generation of neuromorphic image sensors, Integrated Retinal Functionality in CMOS Image Sensors (IRIS), which aims to mimic full retinal computations from photoreceptors to output of the retina (retinal ganglion cells) for targeted feature-extraction. The feature of choice in this work is Object Motion Sensitivity (OMS) that is processed locally in the IRIS sensor. We study the capability of OMS in solving the ego-motion problem of the event-based cameras. Our results show that OMS can accomplish standard computer vision tasks with similar efficiency to conventional RGB and DVS solutions but offers drastic bandwidth reduction. This cuts the wireless and computing power budgets and opens up vast opportunities in high-speed, robust, energy-efficient, and low-bandwidth real-time decision making.

IRIS: Integrated Retinal Functionality in Image Sensors

Neuromorphic image sensors draw inspiration from the biological retina to implement visual computations in electronic hardware. Gain control in phototransduction and temporal differentiation at the first retinal synapse inspired the first generation of neuromorphic sensors, but processing in downstream retinal circuits, much of which has been discovered in the past decade, has not been implemented in image sensor technology. We present a technology-circuit co-design solution that implements two motion computations occurring at the output of the retina that could have wide applications for vision based decision making in dynamic environments. Our simulations on Globalfoundries 22nm technology node show that, by taking advantage of the recent advances in semiconductor chip stacking technology, the proposed retina-inspired circuits can be fabricated on image sensing platforms in existing semiconductor foundries. Integrated Retinal Functionality in Image Sensors (IRIS) technology could drive advances in machine vision applications that demand robust, high-speed, energy-efficient and low-bandwidth real-time decision making.

Intrinsic Spike Timing Dependent Plasticity in Stochastic Magnetic Tunnel Junctions Mediated by Heat Dynamics

The quest for highly efficient cognitive computing has led to extensive research interest for the field of neuromorphic computing. Neuromorphic computing aims to mimic the behavior of biological neurons and synapses using solid-state devices and circuits. Among various approaches, emerging non-volatile memory technologies are of special interest for mimicking neuro-synaptic behavior. These devices allow the mapping of the rich dynamics of biological neurons and synapses onto their intrinsic device physics. In this letter, we focus on Spike Timing Dependent Plasticity (STDP) behavior of biological synapses and propose a method to implement the STDP behavior in Magnetic Tunnel Junction (MTJ) devices. Specifically, we exploit the time-dependent heat dynamics and the response of an MTJ to the instantaneous temperature to imitate the STDP behavior. Our simulations, based on a macro-spin model for magnetization dynamics, show that, STDP can be imitated in stochastic magnetic tunnel junctions by applying simple voltage waveforms as the spiking response of pre- and post-neurons across an MTJ device.

IMAC: In-memory multi-bit Multiplication andACcumulation in 6T SRAM Array

`In-memory computing' is being widely explored as a novel computing paradigm to mitigate the well known memory bottleneck. This emerging paradigm aims at embedding some aspects of computations inside the memory array, thereby avoiding frequent and expensive movement of data between the compute unit and the storage memory. In-memory computing with respect to Silicon memories has been widely explored on various memory bit-cells. Embedding computation inside the 6 transistor (6T) SRAM array is of special interest since it is the most widely used on-chip memory. In this paper, we present a novel in-memory multiplication followed by accumulation operation capable of performing parallel dot products within 6T SRAM without any changes to the standard bitcell. We, further, study the effect of circuit non-idealities and process variations on the accuracy of the LeNet-5 and VGG neural network architectures against the MNIST and CIFAR-10 datasets, respectively. The proposed in-memory dot-product mechanism achieves 88.8% and 99% accuracy for the CIFAR-10 and MNIST, respectively. Compared to the standard von Neumann system, the proposed system is 6.24x better in energy consumption and 9.42x better in delay.

Voltage-Driven Domain-Wall Motion based Neuro-Synaptic Devices for Dynamic On-line Learning

Conventional von-Neumann computing models have achieved remarkable feats for the past few decades. However, they fail to deliver the required efficiency for certain basic tasks like image and speech recognition when compared to biological systems. As such, taking cues from biological systems, novel computing paradigms are being explored for efficient hardware implementations of recognition/classification tasks. The basic building blocks of such neuromorphic systems are neurons and synapses. Towards that end, we propose a leaky-integrate-fire (LIF) neuron and a programmable non-volatile synapse using domain wall motion induced by magneto-electric effect. Due to a strong elastic pinning between the ferro-magnetic domain wall (FM-DW) and the underlying ferro-electric domain wall (FE-DW), the FM-DW gets dragged by the FE-DW on application of a voltage pulse. The fact that FE materials are insulators allows for pure voltage-driven FM-DW motion, which in turn can be used to mimic the behaviors of biological spiking neurons and synapses. The voltage driven nature of the proposed devices allows energy-efficient operation. A detailed device to system level simulation framework based on micromagnetic simulations has been developed to analyze the feasibility of the proposed neuro-synaptic devices. We also demonstrate that the energy-efficient voltage-controlled behavior of the proposed devices make them suitable for dynamic on-line and lifelong learning in spiking neural networks (SNNs).

Proposal for a Leaky-Integrate-Fire Spiking Neuron based on Magneto-Electric Switching of Ferro-magnets

The efficiency of the human brain in performing classification tasks has attracted considerable research interest in brain-inspired neuromorphic computing. Hardware implementations of a neuromorphic system aims to mimic the computations in the brain through interconnection of neurons and synaptic weights. A leaky-integrate-fire (LIF) spiking model is widely used to emulate the dynamics of neuronal action potentials. In this work, we propose a spin based LIF spiking neuron using the magneto-electric (ME) switching of ferro-magnets. The voltage across the ME oxide exhibits a typical leaky-integrate behavior, which in turn switches an underlying ferro-magnet. Due to the effect of thermal noise, the ferro-magnet exhibits probabilistic switching dynamics, which is reminiscent of the stochasticity exhibited by biological neurons. The energy-efficiency of the ME switching mechanism coupled with the intrinsic non-volatility of ferro-magnets result in lower energy consumption, when compared to a CMOS LIF neuron. A device to system-level simulation framework has been developed to investigate the feasibility of the proposed LIF neuron for a hand-written digit recognition problem

Significance Driven Hybrid 8T-6T SRAM for Energy-Efficient Synaptic Storage in Artificial Neural Networks

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have led to a significant interest in the development of efficient hardware implementations. In this work, we focus on designing energy efficient on-chip storage for the synaptic weights. In order to minimize the power consumption of typical digital CMOS implementations of such large-scale networks, the digital neurons could be operated reliably at scaled voltages by reducing the clock frequency. On the contrary, the on-chip synaptic storage designed using a conventional 6T SRAM is susceptible to bitcell failures at reduced voltages. However, the intrinsic error resiliency of NNs to small synaptic weight perturbations enables us to scale the operating voltage of the 6TSRAM. Our analysis on a widely used digit recognition dataset indicates that the voltage can be scaled by 200mV from the nominal operating voltage (950mV) for practically no loss (less than 0.5%) in accuracy (22nm predictive technology). Scaling beyond that causes substantial performance degradation owing to increased probability of failures in the MSBs of the synaptic weights. We, therefore propose a significance driven hybrid 8T-6T SRAM, wherein the sensitive MSBs are stored in 8T bitcells that are robust at scaled voltages due to decoupled read and write paths. In an effort to further minimize the area penalty, we present a synaptic-sensitivity driven hybrid memory architecture consisting of multiple 8T-6T SRAM banks. Our circuit to system-level simulation framework shows that the proposed synaptic-sensitivity driven architecture provides a 30.91% reduction in the memory access power with a 10.41% area overhead, for less than 1% loss in the classification accuracy.