Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic challenges need to be addressed to turn the vision of memristive Neuromorphic Systems-on-a-Chip (NeuSoCs) into reality, issues at the device and circuit interface need immediate attention from the community. In this work, we perform energy-estimation of a NeuSoC system and predict the desirable circuit and device parameters for energy-efficiency optimization. Also, CMOS synapse circuits based on the concept of CMOS memristor emulator are presented as a system prototyping methodology, while practical memristor devices are being developed and integrated with general-purpose CMOS. The proposed mixed-signal memristive synapse can be designed and fabricated using standard CMOS technologies and open doors to interesting applications in cognitive computing circuits.
Brain-inspired learning mechanisms, e.g. spike timing dependent plasticity (STDP), enable agile and fast on-the-fly adaptation capability in a spiking neural network. When incorporating emerging nanoscale resistive non-volatile memory (NVM) devices, with ultra-low power consumption and high-density integration capability, a spiking neural network hardware would result in several orders of magnitude reduction in energy consumption at a very small form factor and potentially herald autonomous learning machines. However, actual memory devices have shown to be intrinsically binary with stochastic switching, and thus impede the realization of ideal STDP with continuous analog values. In this work, a dendritic-inspired processing architecture is proposed in addition to novel CMOS neuron circuits. The utilization of spike attenuations and delays transforms the traditionally undesired stochastic behavior of binary NVMs into a useful leverage that enables biologically-plausible STDP learning. As a result, this work paves a pathway to adopt practical binary emerging NVM devices in brain-inspired neuromorphic computing.
Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such hybrid CMOS-RRAM neuromorphic architectures will result in several orders of magnitude reduction in energy consumption at a very small form factor, and herald autonomous learning machines capable of self-adapting to their environment. However, the progress in this area has been impeded from the realization that the actual memory devices fall well short of their expected behavior. In this work, we discuss the challenges associated with these memory devices and their use in neuromorphic computing circuits, and propose pathways to overcome these limitations by introducing 'dendritic learning'.
Nanoscale resistive memories are expected to fuel dense integration of electronic synapses for large-scale neuromorphic system. To realize such a brain-inspired computing chip, a compact CMOS spiking neuron that performs in-situ learning and computing while driving a large number of resistive synapses is desired. This work presents a novel leaky integrate-and-fire neuron design which implements the dual-mode operation of current integration and synaptic drive, with a single opamp and enables in-situ learning with crossbar resistive synapses. The proposed design was implemented in a 0.18 $\mu$m CMOS technology. Measurements show neuron's ability to drive a thousand resistive synapses, and demonstrate an in-situ associative learning. The neuron circuit occupies a small area of 0.01 mm$^2$ and has an energy-efficiency of 9.3 pJ$/$spike$/$synapse.
Neuromorphic systems that densely integrate CMOS spiking neurons and nano-scale memristor synapses open a new avenue of brain-inspired computing. Existing silicon neurons have molded neural biophysical dynamics but are incompatible with memristor synapses, or used extra training circuitry thus eliminating much of the density advantages gained by using memristors, or were energy inefficient. Here we describe a novel CMOS spiking leaky integrate-and-fire neuron circuit. Building on a reconfigurable architecture with a single opamp, the described neuron accommodates a large number of memristor synapses, and enables online spike timing dependent plasticity (STDP) learning with optimized power consumption. Simulation results of an 180nm CMOS design showed 97% power efficiency metric when realizing STDP learning in 10,000 memristor synapses with a nominal 1M{\Omega} memristance, and only 13{\mu}A current consumption when integrating input spikes. Therefore, the described CMOS neuron contributes a generalized building block for large-scale brain-inspired neuromorphic systems.
A neuromorphic chip that combines CMOS analog spiking neurons and memristive synapses offers a promising solution to brain-inspired computing, as it can provide massive neural network parallelism and density. Previous hybrid analog CMOS-memristor approaches required extensive CMOS circuitry for training, and thus eliminated most of the density advantages gained by the adoption of memristor synapses. Further, they used different waveforms for pre and post-synaptic spikes that added undesirable circuit overhead. Here we describe a hardware architecture that can feature a large number of memristor synapses to learn real-world patterns. We present a versatile CMOS neuron that combines integrate-and-fire behavior, drives passive memristors and implements competitive learning in a compact circuit module, and enables in-situ plasticity in the memristor synapses. We demonstrate handwritten-digits recognition using the proposed architecture using transistor-level circuit simulations. As the described neuromorphic architecture is homogeneous, it realizes a fundamental building block for large-scale energy-efficient brain-inspired silicon chips that could lead to next-generation cognitive computing.
This paper proposed a new regression model called $l_1$-regularized outlier isolation and regression (LOIRE) and a fast algorithm based on block coordinate descent to solve this model. Besides, assuming outliers are gross errors following a Bernoulli process, this paper also presented a Bernoulli estimate model which, in theory, should be very accurate and robust due to its complete elimination of affections caused by outliers. Though this Bernoulli estimate is hard to solve, it could be approximately achieved through a process which takes LOIRE as an important intermediate step. As a result, the approximate Bernoulli estimate is a good combination of Bernoulli estimate's accuracy and LOIRE regression's efficiency with several simulations conducted to strongly verify this point. Moreover, LOIRE can be further extended to realize robust rank factorization which is powerful in recovering low-rank component from massive corruptions. Extensive experimental results showed that the proposed method outperforms state-of-the-art methods like RPCA and GoDec in the aspect of computation speed with a competitive performance.