D3S2: Diffusion-Guided Dataset Distillation for Semantic Segmentation

Dataset distillation (DD) aims to compress large-scale datasets into compact synthetic sets while preserving training efficacy. However, existing studies mainly focus on image classification, leaving dense prediction tasks such as semantic segmentation largely underexplored. In this work, we identify three key challenges for segmentation DD: (i) long-tailed class imbalance, (ii) the need for strict pixel-wise alignment between images and dense labels, and (iii) the high computational cost of optimizing high-resolution data with complex models. To address these challenges, we propose D3S2, a Diffusion-guided Dataset Distillation framework for Semantic Segmentation. Our method adopts a two-stage design. In Class-Balanced Mask Selection, we construct a representative mask set via a greedy strategy that prioritizes underrepresented classes. In Diffusion-Guided Image Synthesis, we employ a pretrained layout-to-image diffusion model to generate images conditioned on the selected masks, naturally ensuring spatial alignment. To further enhance the training utility of synthesized data, we introduce guided diffusion sampling with two complementary objectives: a segmentation-consistency loss for pixel-level alignment, and a class-wise feature matching loss for aligning per-class feature statistics across layers. Extensive experiments demonstrate the superiority of D3S2. Notably, at an extremely compression rate of 1%, our method achieves 24.99% and 35.49% mIoU on ADE20K and COCO-Stuff with Mask2Former (Swin-S), outperforming random selection by 9.34% and 5.70%, respectively.

Diffusion-based Generative Machine Learning Model for Predicting Crack Propagation in Aluminum Nitride at the Atomic Scale

Predicting atomic-scale crack propagation in aluminum nitride (AlN) is critical for semiconductor reliability but remains prohibitively expensive via molecular dynamics (MD). We develop a diffusion-based generative machine learning model to predict atomic-scale crack propagation in AlN, a critical semiconductor material, by conditioning solely on initial microstructure embeddings. Trained on MD simulations of single-crack systems, the model achieves a significant speedup while accurately forecasting dynamic fracture processes, including stress-driven crack initiation, crack branching, and atomic-scale bridging ligaments. Crucially, it demonstrates inherent physical fidelity by reproducing material-intrinsic mechanisms while disregarding periodic boundary artifacts, and generalizes to unseen multi-crack configurations. Validation against MD ground truth confirms the capability of the model to capture complex fracture physics without auxiliary stress or energy data, enabling rapid exploration of crack-mediated failure for semiconductor reliability optimization.