RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions

In high-performance RF transceivers the thrust of has been on lower noise LNAs and high-power high-speed PAs. The performance trade-off has forced many solutions to have the LNA and PA on a separate die compared to the rest of baseband. Often fabricated in GaAs or InP, they need to be properly interfaced with the rest of signal chain leading to signal integrity issues. Applications for such technologies range from defence, aerospace to scientific instrumentation. In this paper we propose a device using superconductor-semiconductor-superconductor (SC-Sm-SC) junction with a controllable gate terminal to modulate the tunnelling resistance. This arrangement in a typical resonant-tank LNA or an impedance matching PA would reduce the parasitic capacitances leading to higher frequency operation. Also by virtue of Cooper-pair bosons being the bulk carriers, noise due to carrier-carrier and carrier-lattice scattering will be much lower than its conventional CMOS counterparts. Our calculation shows that it can be used in a LNA with 20dB gain till 36GHz and in a PA to deliver -10dBm power till 350GHz.